Title :
Reduced turn-on delay time in 1.3 μm InGaAsP/lnP n-type modulation-doped strained multiquantum well lasers
Author :
Nakahara, K. ; Uomi, K. ; Tsuchiya, T. ; Niwa, A.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fDate :
5/11/1995 12:00:00 AM
Abstract :
Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 μm InGaAsP strained multiquantum well lasers for the first time
Keywords :
III-V semiconductors; carrier lifetime; delays; doping profiles; gallium arsenide; indium compounds; quantum well lasers; 1.3 micrometre; InGaAsP-InP; carrier lifetime; n-type modulation doping; n-type modulation-doped strained multiquantum well lasers; threshold current; turn-on delay time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950572
