• DocumentCode
    782619
  • Title

    Reduced turn-on delay time in 1.3 μm InGaAsP/lnP n-type modulation-doped strained multiquantum well lasers

  • Author

    Nakahara, K. ; Uomi, K. ; Tsuchiya, T. ; Niwa, A.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • Volume
    31
  • Issue
    10
  • fYear
    1995
  • fDate
    5/11/1995 12:00:00 AM
  • Firstpage
    809
  • Lastpage
    811
  • Abstract
    Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 μm InGaAsP strained multiquantum well lasers for the first time
  • Keywords
    III-V semiconductors; carrier lifetime; delays; doping profiles; gallium arsenide; indium compounds; quantum well lasers; 1.3 micrometre; InGaAsP-InP; carrier lifetime; n-type modulation doping; n-type modulation-doped strained multiquantum well lasers; threshold current; turn-on delay time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950572
  • Filename
    386930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782619