• DocumentCode
    782661
  • Title

    High temperature characteristic T0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers

  • Author

    Ougazzaden, A. ; Mircea, A. ; Kazmierski, C.

  • Author_Institution
    Lab. de Bagneux, France Telecom, Bagneux, France
  • Volume
    31
  • Issue
    10
  • fYear
    1995
  • fDate
    5/11/1995 12:00:00 AM
  • Firstpage
    803
  • Lastpage
    805
  • Abstract
    A high device quality material consisting of 10 compensated strained quantum well InAsP/InGaP structures was grown by MOCVD at atmospheric pressure. The estimated threshold current density for an infinite cavity length was 130 A/cm2 per well. A high characteristic temperature of 117 K was obtained. To the authors´ knowledge, this is the highest value for as-cleaved lasers at 1.3 μm on InP substrates
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; 1.3 micrometre; 117 K; InAsP-InGaP-InP; InP; MOCVD; as-cleaved lasers; atmospheric pressure; characteristic temperature; compensated strain multiquantum well structure lasers; high temperature characteristic; infinite cavity length; low threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950567
  • Filename
    386934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782661