Title :
All solid source molecular beam epitaxy growth of 1.35 μm wavelength strained-layer GaInAsP quantum well laser
Author :
Toivonen, M. ; Salokatve, A. ; Jalonen, M. ; Näppi, J. ; Asonen, H. ; Pessa, M. ; Murison, R.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
5/11/1995 12:00:00 AM
Abstract :
The first GaInAsP based laser diode grown by all solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 μm was prepared. A low threshold current density of 510 A/cm2 was obtained for a broad-area laser having a cavity length of 1300 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.35 micrometre; 1300 micron; GaInAsP; all solid source MBE; broad-area laser; cavity length; molecular beam epitaxy growth; separate confinement heterostructure multiquantum well laser; strained-layer quantum well laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950526
