• DocumentCode
    782928
  • Title

    Hydrogen incorporation in GaN, AlN, and InN during Cl2/CH4/H2/Ar ECR plasma etching

  • Author

    Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C.B. ; MacKenzie, J.D. ; Shul, R.J. ; Wilson, R.G. ; Zavada, J.M.

  • Author_Institution
    Florida Univ., Gainesville, FL, USA
  • Volume
    31
  • Issue
    10
  • fYear
    1995
  • fDate
    5/11/1995 12:00:00 AM
  • Firstpage
    836
  • Lastpage
    837
  • Abstract
    Hydrogen concentrations up to ~1020 cm-3 in GaN and AlN and ~1019 cm-3 in InN are found to be incorporated during ECR plasma etching in Cl2/CH4/H2Ar at 17°C. Even very short duration (40 s) etch treatments produce hydrogen incorporation depths >0.2 μm ahead of the etch front, and may lead to electrical passivation effects within this region. Post-etch annealing at 450-500°C restores the initial conductivity
  • Keywords
    III-V semiconductors; aluminium compounds; doping profiles; electrical conductivity; gallium compounds; hydrogen; indium compounds; passivation; semiconductor doping; sputter etching; 17 C; 450 to 500 C; AlN; AlN:H; Cl2/CH4/H2/Ar ECR plasma etching; GaN; GaN:H; H concentrations; H incorporation; InN; InN:H; electrical passivation effects; etch treatments; initial conductivity; post-etch annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950558
  • Filename
    386961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782928