Title :
An edge breakdown free MOS-avalanche photodiode image sensor cell
Author :
Komobuchi, Hiroyoshi ; Yamada, Takahiro
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Osaka, Japan
fDate :
8/1/1992 12:00:00 AM
Abstract :
An edge-breakdown-free MOS avalanche photodiode (APD) cell without avalanche multiplication during the readout period was proposed and simulated for a 5 μm×5 μm photosite. From the simulation results, the MOS-APD cell showed three times the sensitivity of the conventional photosite under a 20 V driving voltage
Keywords :
CCD image sensors; avalanche photodiodes; 20 V; 5 micron; CCD image sensors; driving voltage; edge-breakdown-free MOS avalanche photodiode; photodiode image sensor cell; readout period; Charge coupled devices; Charge-coupled image sensors; Electric breakdown; Image sensors; Laboratories; Optical sensors; Photodiodes; Sensor arrays; Silicon; Stimulated emission;
Journal_Title :
Consumer Electronics, IEEE Transactions on
