Title :
Alternative approach to dynamic I/V characterisation of microwave FETs
Author :
Limiti, E. ; Nanni, A. ; Serino, A. ; Giannini, F.
Author_Institution :
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome
Abstract :
A new and simple approach for the measurement of active device dynamic output I/V characteristics is presented. Device characterisation is performed making use of multi-harmonic exciting signal and variable loads at the output port. The measurement bench has been used to characterise a GaAs 1 mm gate periphery PHEMT as a test vehicle. The results, obtained making use of the proposed setup, successfully compare with those obtained via traditional pulsed measurement systems.
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; power HEMT; semiconductor device measurement; GaAs; dynamic I-V characteristics measurements; gate periphery PHEMT; microwave FETs; microwave active devices; multiharmonic exciting signal;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080776
