Title :
Dynamics of monolithic passively mode-locked semiconductor lasers
Author :
Jones, D.J. ; Zhang, L.M. ; Carroll, J.E. ; Marcenac, D.D.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
6/1/1995 12:00:00 AM
Abstract :
Monolithic colliding pulse mode-locking (CPM) in semiconductor lasers is compared with self colliding pulse mode-locking (SCPM) through a large signal dynamic computer model which incorporates most of the significant features of semiconductor lasers. These include gain saturation, spontaneous emission, the gain-frequency relation, and the line-width enhancement factor. This new model replicates many of the published experimental results and also gives additional insight into the internal operation of the device. In particular, gain saturation combined with the standing waves created by colliding pulses within the saturable absorber produce a transient gain grating. This is found to have significant effects in locking either the even or the odd modes together in CPM. A performance comparison between CPM and SCPM is completed and some key design parameters of both configurations are explored
Keywords :
diffraction gratings; laser mode locking; laser modes; laser theory; optical design techniques; optical saturable absorption; semiconductor device models; semiconductor lasers; spectral line breadth; spontaneous emission; design parameters; even modes; gain saturation; gain-frequency relation; internal operation; large signal dynamic computer model; line-width enhancement factor; monolithic colliding pulse mode-locking; monolithic passively mode-locked semiconductor lasers; odd modes; self colliding pulse mode-locking; spontaneous emission; standing waves; Diode lasers; Helium; Laser mode locking; Laser theory; Optical pulse generation; Optical pulses; Semiconductor lasers; Space vector pulse width modulation; Spontaneous emission; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of