DocumentCode
783309
Title
Evaluation of the tolerance of asymmetric Fabry-Perot modulators with respect to realistic operating conditions
Author
Zouganeli, P. ; Parry, G.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume
31
Issue
6
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
1140
Lastpage
1151
Abstract
This paper is concerned with asymmetric Fabry-Perot modulators (AFPM´s) that use the electroabsorptive effect in GaAs-AlGaAs multiple quantum wells (MQW) to yield optical modulation. Although these devices may attain excellent peak-performance characteristics, their resonant nature makes them susceptible to variations in manufacture and to the operational conditions and this will ultimately limit their actual practical implementation. We examine in detail the tolerance of an AFPM to concurrent fluctuations of the main parameters that affect the performance, and evaluate the limitations of the current state-of-the-art. Thus we develop a procedure by which the overall tolerance of resonant structures may be realistically calculated, and identify a parameter of merit that enables an optimization in that respect. A number of ways to minimize the effect on the final performance are also addressed
Keywords
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; optimisation; semiconductor quantum wells; GaAs-AlGaAs; GaAs-AlGaAs multiple quantum wells; asymmetric Fabry-Perot modulators; concurrent fluctuations; electroabsorptive effect; operational conditions; optical modulation; peak-performance characteristics; realistic operating conditions; resonant nature; resonant structures; tolerance; Fabry-Perot; Insertion loss; Manufacturing; Optical losses; Optical modulation; Quantum well devices; Reflectivity; Resonance; Temperature sensors; Voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.387053
Filename
387053
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