DocumentCode
783670
Title
Dark current analysis and characterization of InxGa1-xAs/InAsyP1-y graded photodiodes with x >0.53 for response to longer wavelengths (>1.7 μm)
Author
Linga, Krishna R. ; Olsen, Gregory H. ; Ban, Vladimir S. ; Joshi, Abhay M. ; Kosonocky, Walter F.
Author_Institution
Epitaxx Inc., Princeton, NJ, USA
Volume
10
Issue
8
fYear
1992
fDate
8/1/1992 12:00:00 AM
Firstpage
1050
Lastpage
1055
Abstract
The dark current properties of InxGa1-xAs photodiodes, where x is varied from 0.53 to 0.82 for extending the long wavelength cutoff from 1.7 to 2.6 μm, are described. Detailed analyses of optoelectrical parameters of In0.82Ga 0.1As photodiodes are presented. Dark current, which is a critical parameter and limits the operation of the photodiode, is analyzed and compared with the experimental values. Typical characteristics of photodiodes with cutoff wavelengths of 1.7 μm (x =0.53), 2.2 μm (x =0.72), and 2.6 μm (x =0.82) are presented. The typical and best values of the dark currents obtained are presented
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; 1.7 to 2.6 micron; III-V semiconductors; InxGa1-xAs-InAsyP1-y; dark current properties; graded photodiodes; long wavelength cutoff; optoelectrical parameters; Dark current; Detectors; Helium; Indium gallium arsenide; Indium phosphide; Lattices; Optical fiber communication; Photodiodes; Photonic band gap; Substrates;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.156844
Filename
156844
Link To Document