DocumentCode :
783974
Title :
14-GHz GaNAsSb Unitraveling-Carrier 1.3- \\mu\\hbox {m} Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy
Author :
Tan, Kian Hua ; Yoon, Soon F. ; Fedderwitz, Sascha ; Stohhr, A. ; Loke, Wan Khai ; Wicaksono, Satrio ; Ng, Tien Khee ; Weiß, Mario ; Poloczek, Artur ; Rymanov, Vitaly ; Patra, Ardhendu S. ; Tangdiongga, Eduward ; Jäger, Dieter
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume :
30
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
590
Lastpage :
592
Abstract :
We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-mum GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. The 0.1-mum -thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and -9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.
Keywords :
arsenic compounds; gallium compounds; nitrogen compounds; photodetectors; GaNAsSb; frequency 14 GHz; molecular beam epitaxy; radiofrequency plasma-assisted nitrogen source; size 0.1 mum; size 1.3 mum; time 46 ps; unitraveling-carrier photodetectors; voltage -9 V; 1.3-$muhbox{m}$ PDs; Dilute-nitride-based photodetectors (PDs); GaNAsSb; molecular beam epitaxy (MBE);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2018290
Filename :
4895271
Link To Document :
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