GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate

Author

Chang, Chung-Ying ; Chang, Shoou-Jinn ; Liu, C.H. ; Li, Shuguang ; Chen, Evan

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

25

Issue

1

fYear

2013

fDate

Jan.1, 2013

Firstpage

88

Lastpage

90

Abstract

We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; light emitting diodes; nucleation; optical fabrication; wide band gap semiconductors; 1-A current injection; Al₂O₃; GaN-AlN; GaN-based LED; HT-AlN nucleation layer; LED output power; defect selective etching; high-temperature nucleation; light-emitting diodes; patterned sapphire substrate; undercut sidewalls; Crystals; Etching; Gallium nitride; Light emitting diodes; Power generation; Semiconductor device measurement; Substrates; GaN; high-temperature (HT)-AlN; light-emitting diodes (LEDs); nucleation; patterned sapphire substrate (PSS);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2228637

Filename

6363522