RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

Author

Kolluri, Seshadri ; Pei, Yi ; Keller, Stacia ; DenBaars, Steven P. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA

Volume

30

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

584

Lastpage

586

Abstract

We present a high-performance nitrogen-polar AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor grown on sapphire substrate using metal-organic chemical vapor deposition. Source-terminated field plates were used to mitigate the electric field in the drain-extension region and reduce DC-to-RF dispersion. Devices with 0.7-mum gate length showed a current-gain cutoff frequency (f _T) of 14 GHz and a power-gain cutoff frequency (f _max) of 36 GHz. A continuous-wave output power density of 4.7 W/mm was measured at 4 GHz, with an associated power-added efficiency of 64% and a large-signal gain of 14.4 dB at a drain bias of 30 V.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; disperse systems; gallium compounds; high electron mobility transistors; nitrogen; sapphire; AlGaN-GaN; DC-to-RF dispersion reduction; RF performance; electric field; frequency 14 GHz; frequency 36 GHz; frequency 4 GHz; gain 14.4 dB; metal-organic chemical vapor deposition; nitrogen-polar AlGaN/GaN MIS-HEMT; sapphire substrate; source-terminated field plates; voltage 30 V; GaN; N-polar; high-electron-mobility transistor (HEMT); metal–organic chemical vapor deposition (MOCVD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2018708

Filename

4895289