Title :
Electro-optic imaging of internal fields in (111) GaAs photoconductors
Author :
Adams, J.C. ; Falk, R.A. ; Ferrier, S.G. ; Capps, C.D.
Author_Institution :
Boeing Def. & Space Group, Seattle, WA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
The nonuniform electric field in a surface (111) GaAs photoconductor was imaged for the first time using the electro-optic effect of the device itself. The technique used a mode-locked 1.06 μm laser with 150 ps pulses to transiently probe the electric field profile at various times following application of a synchronized pulsed voltage bias
Keywords :
III-V semiconductors; avalanche breakdown; electro-optical effects; gallium arsenide; laser beam applications; laser mode locking; photoconducting switches; pulsed power switches; 1.06 micrometre; 150 ps; GaAs; electric field profile; electro-optic imaging; internal fields; mode-locked laser; nonuniform electric field; optically induced avalanche; photoconductive switches; pulsed power applications; synchronized pulsed voltage bias; Electric variables measurement; Gallium arsenide; Laser beam cutting; Lasers and electrooptics; Nonlinear optics; Optical pulses; Optical sensors; Photoconductivity; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
