Abstract :
A silicon integrated PIN photodiode sensor, combined with a bipolar IC on same substrate (that is, a PIN photo integrated circuit sensor: PIN-PICS), was developed by employing a high resistive P-- epitaxial layer on a P+ substrate for creating a high speed and high optical responsivity PIN photodiode. We fabricated this device based on two special techniques: (1) the PIN photodiode is formed on a P--/P+ substrate structure and isolated from bipolar components by the combination of a P--well and a trench isolation, and (2) bipolar components are formed by the doubly diffused buried layer of the P--well and the N+ collector wall. All of these components, such as npn and pnp transistors, were arranged within the lightly doped P--well regions. From several kinds of trial samples, the following results were obtained. The PIN photodiode with 0.145 mm2 active area indicated 680 MHz for cutoff frequency at 10 V bias with 830 mn radiation. In the case of 20 V bias, this value exceeded 1.5 GHz. This PIN-PICS was applied to a 10 Mbit/s burst mode compatible optical monolithic receiver and a transimpedance amplifier, and it has shown the expected results
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated optoelectronics; isolation technology; optical receivers; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; silicon; 1.5 GHz; 10 Mbit/s; 10 V; 20 V; 680 MHz; 830 nm; N+ collector wall; PIN photo integrated circuit sensor; PIN photodiode sensor; PIN-PICS; Si; active area; bipolar IC; burst mode compatible optical monolithic receiver; cutoff frequency; doubly diffused buried layer; epitaxial layer; lightly doped P--well regions; optical responsivity; transimpedance amplifier; trench isolation; Bipolar integrated circuits; Epitaxial layers; High speed integrated circuits; High speed optical techniques; Optical receivers; Optical sensors; PIN photodiodes; Photonic integrated circuits; Silicon; Substrates;
