Noncontact measurement of charge induced voltage shift in capacitive MEM-switches

Author

Reid, J. Robert ; Webster, Richard T. ; Starman, LaVern A.

Author_Institution

Antenna Technol. Branch, Air Force Res. Lab., Hanscom, MA, USA

Volume

13

Issue

9

fYear

2003

Firstpage

367

Lastpage

369

Abstract

The use of a modulated microwave signal to directly measure the voltage shift induced by charge in the dielectric layer of a capacitive microelectromechanical (MEM) switch is presented. This method does not require the metal bridge to contact the dielectric layer and is thus much less intrusive than previously reported measurements. The technique is a useful tool for understanding charge build up and dissipation in capacitive MEM switches.

Keywords

capacitors; dielectric thin films; microswitches; microwave measurement; microwave switches; reliability; surface charging; voltage measurement; capacitive MEM-switches; capacitive microelectromechanical switch; charge build up; charge dissipation; charge induced voltage shift; dielectric charging; dielectric layer; modulated microwave signal; noncontact measurement; reliability; switch failure; voltage shift measurement; Bridge circuits; Charge measurement; Contacts; Current measurement; Dielectric measurements; Monitoring; Pollution measurement; Stress; Switches; Voltage measurement;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.817124

Filename

1232548