Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics

Author

Euler, T. ; Papapolymerou, J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

13

Issue

9

fYear

2003

Firstpage

373

Lastpage

375

Abstract

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebyshev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 μm thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Keywords

Chebyshev filters; coplanar waveguide components; micromachining; micromechanical resonators; microwave photonics; millimetre wave filters; periodic structures; photonic band gap; resonator filters; silicon; sputter etching; 2.3 dB; 400 micron; 45 GHz; Si; Si micromachined EBG resonator; coplanar waveguide feeds; deep reactive ion etching; equiripple bandwidth; high-resistivity silicon wafer; micromachining; performance characteristics; periodic electromagnetic bandgap structure; planar filter; two-pole Tchebyshev filter; two-pole filter; Bandwidth; Coplanar waveguides; Electromagnetic waveguides; Etching; Feeds; Metamaterials; Periodic structures; Photonic band gap; Resonator filters; Silicon;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.817132

Filename

1232550