Title :
Modeling of CrSi2-Si and MoSi2-Si Schottky barrier contacts
Author :
Donoval, D. ; Snowden, C.M. ; Nagl, V. ; Racko, J. ; Barus, M.
Author_Institution :
Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
fDate :
6/1/1995 12:00:00 AM
Abstract :
Forward and reverse l-V characteristics measured on CrSi2 -Si and MoSi2Si Schottky structures were compared with simulated ones. While the CrSi2-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi2-Si exhibit the nearly ideal forward and reverse I-V characteristics. The model for numerical simulation involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation recombination theory and has the closed form
Keywords :
Schottky barriers; Schottky diodes; chromium compounds; electron-hole recombination; elemental semiconductors; molybdenum compounds; semiconductor device models; semiconductor-metal boundaries; silicon; CrSi2-Si; MoSi2-Si; Schottky barrier contacts; clearly defined boundary conditions; forward l-V characteristics; generation recombination theory; nonideal I-V characteristics; numerical simulation; reverse l-V characteristics; thermionic-emission/diffusion theory; Boundary conditions; Breakdown voltage; Character generation; Charge carrier processes; Effective mass; Electrostatic analysis; Quantum mechanics; Radiative recombination; Schottky barriers; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
