• DocumentCode
    784451
  • Title

    Characteristics of SiNx/InP/In0.53Ga0.47 As/InP heterostructure insulated gate (HIG)FET´s with an In2 S3 interface control layer

  • Author

    Sundararaman, C.S. ; Currie, J.F.

  • Author_Institution
    Dept. of Eng. Phys., Ecole Polytech. de Montreal, Que., Canada
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    1197
  • Lastpage
    1199
  • Abstract
    InP/InGaAs HIGFET´s with SiNx as gate insulator have been fabricated for the first time. An In2S3 interface control layer (ICL) is used to reduce trap states at the InP/SiNx interface. The ICL HIGFET´s show excellent drain I-V characteristics and allows large gate swings (±5 V) with negligible (<1 nA) gate leakage
  • Keywords
    III-V semiconductors; electron traps; gallium arsenide; indium compounds; insulated gate field effect transistors; power field effect transistors; silicon compounds; HIGFETs; In2S3; SiN-InP-InGaAs-InP; drain I-V characteristics; gate leakage; gate swings; heterostructure insulated gate FETs; interface control layer; trap states; Buffer layers; Capacitance; Capacitance-voltage characteristics; Capacitors; Electron traps; Indium phosphide; Insulation; Silicon compounds; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.387260
  • Filename
    387260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=784451