Title :
Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser
Author :
Kondratko, Piotr Konrad ; Chuang, Shun-Lien ; Walter, Gabriel ; Holonyak, Nick, Jr. ; Heller, Richard D. ; Zhang, Xuebing ; Dupuis, Russell D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
5/1/2005 12:00:00 AM
Abstract :
Polarization-resolved amplified spontaneous emission (ASE) and gain from tensile-strained multiple quantum wells (QWs) coupled to a single layer of compressively strained quantum dots (QDs) show interesting output characteristics. Low current injection reveals transverse electric polarized ASE from the QD ground state and QD-coupled-QW state. Additionally, transverse magnetic ASE from the QW state is observed. The modal gain of this laser shows coupled active state activation which is evident by spectral narrowing and change from QW-like to QD-like spectrum.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; ground states; indium compounds; light polarisation; quantum dot lasers; quantum well lasers; spectral line narrowing; superradiance; tunnelling; InP-InGaAlP; InP-InGaAlP laser; QD ground state; QD-coupled-QW state; QD-like spectrum; QW-like spectrum; amplified spontaneous emission; compressively strained quantum dots; coupled active state activation; gain narrowing; laser output behavior; low current injection; modal gain; polarization-resolved ASE; quantum-dot-well laser; spectral narrowing; tensile-strained multiple quantum wells; transverse electric polarized ASE; transverse magnetic ASE; tunneling injection laser; Geometrical optics; Indium phosphide; Optical coupling; Optical polarization; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Tellurium; Threshold current; Tunneling; Modal gain; quantum dot (QD); quantum well (QW); semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.844328
