DocumentCode :
784490
Title :
Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers
Author :
Björlin, E. Staffan ; Geske, Jon ; Mehta, Manish ; Piprek, Joachim ; Bowers, John E.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Volume :
17
Issue :
5
fYear :
2005
fDate :
5/1/2005 12:00:00 AM
Firstpage :
944
Lastpage :
946
Abstract :
The temperature dependence of the differential gain in AlInGaAs 1310-nm vertical-cavity lasers is investigated. The variations in differential gain and in relaxation resonance frequency are shown to depend on the room-temperature offset between the gain peak wavelength and the wavelength of the lasing mode. The tradeoff between high modulation bandwidth and good high-temperature performance for vertical-cavity lasers is analyzed. A cavity mode that is red-shifted about 25 nm from the gain peak is shown to minimize the variation in modulation bandwidth with temperature, and simultaneously allow for satisfactory high-temperature operation. Experimental results are presented and compared to calculated results with excellent agreement. Because of the change in gain-mode offset with internal temperature, the measured modulation current efficiency changed from about 2 to 4.8 GHz/mA12/ for an increase in drive current from 2 to 10 mA.
Keywords :
III-V semiconductors; aluminium compounds; carrier relaxation time; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical communication equipment; optical modulation; red shift; semiconductor lasers; surface emitting lasers; thermo-optical effects; 1310 nm; 2 to 10 mA; AlInGaAs; AlInGaAs lasers; differential gain; gain peak wavelength; gain-mode offset; high-temperature operation; high-temperature performance; lasing mode; long-wavelength lasers; modulation bandwidth; modulation current efficiency; optical communication systems; red shifted cavity mode; relaxation resonance frequency; room temperature offset; temperature dependence; vertical-cavity lasers; Bandwidth; Current measurement; Gain measurement; Laser modes; Performance analysis; Resonance; Resonant frequency; Temperature dependence; Temperature measurement; Vertical cavity surface emitting lasers; Optical communication; optical modulation; semiconductor lasers; surface-emitting lasers; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2005.844560
Filename :
1424061
Link To Document :
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