• DocumentCode
    784490
  • Title

    Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers

  • Author

    Björlin, E. Staffan ; Geske, Jon ; Mehta, Manish ; Piprek, Joachim ; Bowers, John E.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
  • Volume
    17
  • Issue
    5
  • fYear
    2005
  • fDate
    5/1/2005 12:00:00 AM
  • Firstpage
    944
  • Lastpage
    946
  • Abstract
    The temperature dependence of the differential gain in AlInGaAs 1310-nm vertical-cavity lasers is investigated. The variations in differential gain and in relaxation resonance frequency are shown to depend on the room-temperature offset between the gain peak wavelength and the wavelength of the lasing mode. The tradeoff between high modulation bandwidth and good high-temperature performance for vertical-cavity lasers is analyzed. A cavity mode that is red-shifted about 25 nm from the gain peak is shown to minimize the variation in modulation bandwidth with temperature, and simultaneously allow for satisfactory high-temperature operation. Experimental results are presented and compared to calculated results with excellent agreement. Because of the change in gain-mode offset with internal temperature, the measured modulation current efficiency changed from about 2 to 4.8 GHz/mA12/ for an increase in drive current from 2 to 10 mA.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier relaxation time; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical communication equipment; optical modulation; red shift; semiconductor lasers; surface emitting lasers; thermo-optical effects; 1310 nm; 2 to 10 mA; AlInGaAs; AlInGaAs lasers; differential gain; gain peak wavelength; gain-mode offset; high-temperature operation; high-temperature performance; lasing mode; long-wavelength lasers; modulation bandwidth; modulation current efficiency; optical communication systems; red shifted cavity mode; relaxation resonance frequency; room temperature offset; temperature dependence; vertical-cavity lasers; Bandwidth; Current measurement; Gain measurement; Laser modes; Performance analysis; Resonance; Resonant frequency; Temperature dependence; Temperature measurement; Vertical cavity surface emitting lasers; Optical communication; optical modulation; semiconductor lasers; surface-emitting lasers; vertical-cavity surface-emitting lasers (VCSELs);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2005.844560
  • Filename
    1424061