Title :
Low-threshold operation of 1.34-μm GaInNAs VCSEL grown by MOVPE
Author :
Yamada, M. ; Anan, T. ; Hatakeyama, H. ; Tokutome, K. ; Suzuki, N. ; Nakamura, T. ; Nishi, K.
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Shiga, Japan
fDate :
5/1/2005 12:00:00 AM
Abstract :
Low-threshold operation was demonstrated for a 1.34-μm vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm2 at 1.34 μm and 1.1 kA/cm2 at 1.38 μm, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 μm at room temperature and operated up to 60/spl deg/C.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.34 mum; 1.342 mum; 1.38 mum; 2.8 mA; 20 to 60 degC; GaInNAs; GaInNAs VCSEL; GaInNAs active layers; GaInNAs quantum wells; MOVPE; edge-emitting lasers; low threshold current densities; low-threshold operation; metal-organic vapor-phase epitaxy; room temperature; semiconductor growth; vertical cavity surface-emitting laser; Degradation; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium; Nitrogen; Optical surface waves; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Coarse wavelength-division multiplexing (CWDM); GaInNAs; metal–organic vapor-phase epitaxy (MOVPE); vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.844325
