Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements

Author

Anton, O. ; Menoni, C.S. ; Yeh, J.Y. ; Mawst, L.J. ; Pikal, J.M. ; Tansu, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

17

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

953

Lastpage

955

Abstract

The recombination lifetime of metal-organic chemical vapor deposition grown InGaAsN-GaAsP-GaAs lasers with nitrogen content of 0% and 0.5% has been investigated from below threshold modulation frequency response measurements. Using an analysis that removes the contribution of electrical parasitic effects from the measured lifetime, it is shown that the recombination lifetime is significantly reduced when nitrogen is added into the quantum well. Furthermore, it is shown that this reduction is mainly the result of approximately a factor of four increase in the monomolecular recombination rate.

Keywords

III-V semiconductors; MOCVD; carrier lifetime; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; optical modulation; quantum well lasers; semiconductor growth; 1.3 mum; InGaAsN-GaAsP-GaAs; InGaAsN-GaAsP-GaAs lasers; MOCVD; carrier lifetime measurements; electrical parasitic effects; metal-organic chemical vapor deposition; modulation frequency response measurements; monomolecular recombination; nitrogen content; quantum well lasers; recombination lifetime; Charge carrier lifetime; Chemical lasers; Chemical vapor deposition; Frequency measurement; Frequency modulation; Frequency response; MOCVD; Nitrogen; Quantum well lasers; Radiative recombination; InGaAsN; laser diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.844332

Filename

1424064