Title :
Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications
Author :
Dagens, Beatrice ; Martinez, Anthony ; Make, Dalila ; Le Gouezigou, Odile ; Provost, Jean-Guy ; Sallet, Vincent ; Merghem, Kamel ; Harmand, Jean-Christophe ; Ramdane, Abderrahim ; Thedrez, Bruno
Author_Institution :
Alcatel Thales III-V Lab, Marcoussis, France
fDate :
5/1/2005 12:00:00 AM
Abstract :
Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T0. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25°C-85°C. Besides transmission is demonstrated up to 10 Gb/s at 25°C on the same fiber, without penalty and bit-error-rate floor.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; metropolitan area networks; optical communication equipment; optical fibre networks; optical modulation; quantum well lasers; 1.35 mum; 10 Gbit/s; 25 to 85 degC; GaInNAs-GaAs; GaInNAs-GaAs laser; differential gain; directly modulated laser; directly modulated laser emission; floor-free transmission; high bit rate modulation; laser transmission; metropolitan applications; semiconductor materials; telecom devices; three-quantum-well ridge structure; Bit rate; Distributed feedback devices; Fiber lasers; Laser applications; Laser feedback; Optical fiber communication; Optical materials; Performance evaluation; Semiconductor lasers; Temperature; Characteristic temperature; GaInNAs; metropolitan area networks; optical communication; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.845718
