DocumentCode :
784616
Title :
A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure
Author :
Morito, Ken ; Tanaka, Shinsuke ; Tomabechi, Shuich ; Kuramata, Akito
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
17
Issue :
5
fYear :
2005
fDate :
5/1/2005 12:00:00 AM
Firstpage :
974
Lastpage :
976
Abstract :
A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of >+19.6 dBm and a low chip NF of <4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s nonreturn-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of +18.1 dBm.
Keywords :
laser noise; optical fibre communication; optical losses; optical modulation; optical saturation; quantum well lasers; semiconductor device noise; semiconductor optical amplifiers; 1450 to 1570 nm; 3 dB; 40 Gbit/s; broad-band semiconductor optical amplifier; gain bandwidth; high saturation output power; low internal loss; low noise figure; multiquantum well; optical signal amplification; penalty-free amplification; return-to-zero format; Bandwidth; Noise figure; Noise measurement; Optical losses; Optical modulation; Power amplifiers; Power generation; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission; Amplifier noise; gain measurement; quantum wells; semiconductor optical amplifiers (SOAs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2005.845733
Filename :
1424071
Link To Document :
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