Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

Author

Huang, Hung-Wen ; Kao, C.C. ; Chu, J.T. ; Kuo, H.C. ; Wang, S.C. ; Yu, C.C.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

17

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

983

Lastpage

985

Abstract

This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.

Keywords

III-V semiconductors; etching; gallium compounds; indium compounds; light emitting diodes; masks; nanotechnology; surface roughness; 20 mA; 3.5 to 3.65 V; InGN-GaN light-emitting diode; InGaN-GaN; Ni nanomask; nanoroughened surface; p-GaN surface; series resistance; wall-plug efficiency; wet etching; Brightness; Gallium nitride; Light emitting diodes; Nickel; Refractive index; Rough surfaces; Surface resistance; Surface roughness; Temperature; Wet etching; Gallium nitride (GaN); light-emitting diode (LED); nano-mask; nickel;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.846741

Filename

1424074