A novel radiation imaging sensor based on self-activated pixels

Author

Kavadias, Spyros ; Misiakos, Konstantinos ; Loukas, Dimitris

Author_Institution

NCSR Demokritos, Athens, Greece

Volume

42

Issue

3

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

155

Lastpage

162

Abstract

A new position sensitive detector for charged particles and X-rays is proposed based on pixels containing MOS transistors as preamplifiers. The output of the preamplifiers is shorted to strip buses to obtain two-dimensional information with readout requirements similar to a strip detector. The total pixel capacitance is low enough (20-40 fF) to allow a large potential increase at the pixel that collected the charge. The nonlinearity introduced by the large voltage rise effectively switches on the transistors of this pixel and leaves all the other pixels of the same line at a low transconductance state, resulting in an excellent noise performance

Keywords

MOS integrated circuits; X-ray detection; X-ray imaging; field effect transistor switches; nuclear electronics; position sensitive particle detectors; preamplifiers; silicon radiation detectors; 20 to 40 fF; MOS transistors; X-rays; charged particles; noise performance; position sensitive detector; preamplifiers; radiation imaging sensor; readout requirements; self-activated pixels; strip buses; total pixel capacitance; transconductance state; Capacitance; Image sensors; MOSFETs; Pixel; Position sensitive particle detectors; Preamplifiers; Radiation imaging; Strips; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.387355

Filename

387355