Title :
Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions
Author :
Kurokawa, M. ; Motobayashi, T. ; Ieki, K. ; Shimoura, S. ; Murakami, H. ; Ikeda, Y. ; Moriya, S. ; Yanagisawa, Y. ; Nomura, T.
Author_Institution :
Dept. of Phys., Rikkyo Univ., Tokyo, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
Ion-implanted silicon detectors were irradiated with 18-150 MeV 16O, 20 MeV 40Ar, and 53 MeV 110Xe. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2×108 cm-2. Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies
Keywords :
ion beam effects; silicon radiation detectors; 110Xe irradiation; 16O irradiation; 40Ar irradiation; averaged nuclear stopping power; heavy ion irradiation; ion-implanted Si detectors; leakage current; particle fluence; protons; radiation damage factor; Argon; Current measurement; Electrons; Energy loss; Energy measurement; Helium; Leakage current; Protons; Radiation detectors; Silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
