Title :
Single wavelength grating filter laser array with Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW structure
Author :
Dong, Jie ; Ikeda, Tetsu ; Arai, Shigehisa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Stable in-phase lateral- and single-longitudinal-mode operation up to four times the threshold (P/sub o/ approximately 100 mW) was achieved in a five-element 1.5- mu m-wavelength Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP compressive strained MQW grating filter laser array. The threshold current and external differential quantum efficiency under pulsed condition were 330 mA (emitter width of 18 mu m, active region length of 480 mu m) and 17%, respectively.<>
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser modes; optical filters; semiconductor laser arrays; 1.5 micron; 100 mW; 17 percent; 18 micron; 330 mA; 480 micron; Ga/sub 0.3/In/sub 0.7/As-GaInAsP-InP; IR; active region length; compressive strained; emitter width; external differential quantum efficiency; five-element; grating filter laser array; pulsed condition; semiconductors; single wavelength diode laser array; single-longitudinal-mode operation; stable in-phase lateral-mode operation; strained MQW structure; threshold current; Chemical lasers; Electrons; Fiber lasers; Filters; Gratings; Indium phosphide; Optical arrays; Optical fiber communication; Quantum well devices; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
