Title :
Phase-amplitude coupling factor of single-mode gain-switched InGaAsP laser diodes
Author :
Bouchoule, S. ; Stelmakh, N. ; Lourtioz, J.-M. ; Cavelier, M. ; Kazmierski, C.
Author_Institution :
Inst. d´´Electron. Fondamentale, Paris Univ., Orsay, France
Abstract :
The phase amplitude coupling factor ( alpha -factor) of gain-switched InGaAsP laser diodes is deduced from chirp measurements. A tunable laser scheme makes it possible to obtain the wavelength dependence of alpha over approximately 40 nm. The alpha -values are found to be higher than those deduced from spontaneous emission spectra below threshold. It is shown that the difference is explained by the dependence of alpha with carrier density. Time-resolved measurements of spontaneous emission during pulse buildup reveal that the carrier density at maximum can be 1.5 times higher than the threshold carrier density. Experimental evolutions of alpha are well reproduced by calculations.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser modes; optical switches; semiconductor lasers; semiconductor switches; superradiance; InGaAsP laser diodes; alpha -factor; amplified spontaneous emission; below threshold; carrier density; chirp measurements; gain-switched; phase amplitude coupling factor; pulse buildup; semiconductors; single-mode; spontaneous emission spectra; threshold carrier density; time-resolved measurements; tunable laser; wavelength dependence; Charge carrier density; Chirp; Diode lasers; Gain measurement; Optical coupling; Phase measurement; Pulse measurements; Spontaneous emission; Tunable circuits and devices; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
