DocumentCode
785336
Title
A field-effect GaAs laser diode with controlled carrier distribution in central and satellite valleys
Author
Sutkus, Kestutis ; Shum, Kai ; Alfano, R.R.
Author_Institution
City Univ. of New York, NY, USA
Volume
4
Issue
9
fYear
1992
Firstpage
982
Lastpage
984
Abstract
The transient behavior of a field-effect GaAs laser diode is modeled under a controlled carrier distribution in the central ( Gamma ) and satellite (S) valleys. The carrier distribution control is achieved by modulating the applied electric field which heats carriers to energies higher than 0.38 eV for Gamma to S scatterings. The numerical analysis of the rate equations shows that picosecond optical pulses can be produced.<>
Keywords
III-V semiconductors; field effect devices; gallium arsenide; laser theory; semiconductor device models; semiconductor lasers; 0.38 eV; GaAs; applied electric field; carrier distribution control; carrier heating; central valleys; controlled carrier distribution; electric field modulation; field-effect GaAs laser diode; numerical analysis; picosecond optical pulses; rate equations; satellite valleys; semiconductors; transient behavior; Centralized control; Diode lasers; Equations; Gallium arsenide; Numerical analysis; Optical control; Optical scattering; Resistance heating; Satellites; Temperature control;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.157122
Filename
157122
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