Title :
Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometry
Author :
Wu, I-Fan ; Riant, Isabelle ; Verdiell, Jean-Marc ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Very strict requirements need to be met for producing a high-quality single-layer antireflection coating on a traveling-wave laser amplifier facet. In order to obtain a facet reflectivity of 10/sup -4/ or less, the index of refraction and the layer thickness of single-layer coatings have to be controlled to better than 0.03 and 30 AA, respectively. An innovative approach to highly controlled antireflection layer deposition based on in situ real-time ellipsometry is presented. Index control within +or-0.01 and a facet reflectivity on the order of 10/sup -4/ are reproducibly obtained.<>
Keywords :
antireflection coatings; ellipsometry; laser accessories; laser variables measurement; optical films; reflectivity; refractive index; semiconductor lasers; vacuum deposition; facet reflectivity; high-quality single-layer antireflection coating; highly controlled antireflection layer deposition; in situ monitoring; index control; index of refraction; layer thickness; real-time ellipsometry; semiconductor laser amplifiers; single-layer coatings; traveling-wave laser amplifier facet; Coatings; Ellipsometry; Monitoring; Optical films; Optical interconnections; Optical refraction; Reflectivity; Semiconductor lasers; Semiconductor optical amplifiers; Thickness control;
Journal_Title :
Photonics Technology Letters, IEEE
