Extremely large band gap shifts for MQW structures by selective epitaxy on SiO/sub 2/ masked substrates

Author

Joyner, C.H. ; Chandrasekhar, S. ; Sulhoff, J.W. ; Dentai, A.G.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

4

Issue

9

fYear

1992

Firstpage

1006

Lastpage

1009

Abstract

The authors investigate selective epitaxy through SiO/sub 2/ masks of varied geometry with the goal of making planar photonic integrated circuits. The InGaAs/InP, InGaAsP/InP, and InGaAs/InGaAsP MQW material systems are studied with atmospheric and 100-torr MOVPE. Extremely large bandgap shifts (136 meV) can be achieved, more than enough to allow construction of lasers, modulators, and low-loss waveguides in a single plane.<>

Keywords

integrated optoelectronics; masks; semiconductor growth; vapour phase epitaxial growth; 100 torr; InGaAs-InGaAsP; InGaAs-InP; InGaAsP-InP; MOVPE; MQW material systems; MQW structures; SiO/sub 2/ masked substrates; atmospheric pressure; large band gap shifts; lasers; low-loss waveguides; masks; modulators; optical workshop techniques; planar photonic integrated circuits; selective epitaxy; semiconductors; single plane; Atmospheric waves; Epitaxial growth; Epitaxial layers; Geometrical optics; Indium gallium arsenide; Indium phosphide; Optical materials; Photonic band gap; Photonic integrated circuits; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157130

Filename

157130