Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures

Author

Shimomura, Kazuhiko ; Arai, Shigehisa ; Suematsu, Yasuharu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

28

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

471

Lastpage

478

Abstract

Operational wavelength range for low insertion loss and high extinction ratio of GaInAs(P)-InP intersectional optical switches consisting of low-dimensional quantum-well structures, such as quantum-box, quantum-wire, and quantum-film structures, is theoretically analyzed. It is found that superior operation characteristics can be attained with the lower-dimensional quantum-well structure. For instance, an operational wavelength range of around 10 nm for an insertion loss less than 1 dB and an extinction ratio higher than 50 dB can be obtained with the device using a quantum-box structure

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical losses; optical switches; semiconductor quantum dots; semiconductor quantum wires; semiconductor switches; 1 dB; GaInAsP-InP; field-induced electrooptic effect; high extinction ratio; insertion loss; intersectional optical switches; low insertion loss; low-dimensional quantum-well structures; operation characteristics; operational wavelength range; quantum-box; quantum-film structures; quantum-wire; semiconductors; Absorption; Dielectric materials; Extinction ratio; High speed optical techniques; Optical devices; Optical losses; Optical switches; Optical waveguides; Quantum wells; Refractive index;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.123275

Filename

123275