Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum wells

Author

Noda, Susumu ; Uemura, Tetsuya ; Yamashita, Takao ; Sasaki, Akio

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

Volume

28

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

493

Lastpage

500

Abstract

The authors describe a theoretical analysis on interband-resonant light modulation by intersubband-resonant light in the n-doped quantum well. The modulation principle is briefly explained. The theoretical formulation for the modulation is derived by using density matrix theory. The modulation characteristics concerning the absorption coefficient and refractive index are calculated for various parameters. It is shown that the absorption coefficient for the interband-resonant light can be greatly changed by the incidence of intersubband-resonant light

Keywords

light absorption; optical constants; optical modulation; refractive index; semiconductor quantum wells; absorption coefficient; density matrix theory; interband-resonant light modulation; intersubband-resonant light; modulation principle; n-doped quantum wells; refractive index; Absorption; Epitaxial growth; Excitons; Molecular beam epitaxial growth; Optical bistability; Optical devices; Optical modulation; Optical refraction; Optical variables control; Refractive index;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.123278

Filename

123278