High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

Author

Yan, Bei-Ping ; Yang, Yue-Fei ; Yue-Fei Yang ; Wang, Xiao-Qin ; Hsu, Chung-Chi

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, China

Volume

50

Issue

10

fYear

2003

Firstpage

2154

Lastpage

2158

Abstract

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm². Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.

Keywords

III-V semiconductors; UHF bipolar transistors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; power bipolar transistors; 0.25 W; 1.0 W; 1.9 GHz; 63 percent; 63.5 percent; InGaP-GaAs; InGaP/GaAs; impedance matching; large signal performance; offset voltage; output power; power added efficiency; power cells; power heterostructure-emitter bipolar transistors; thermal management; total emitter area; Bipolar transistors; Energy management; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Low voltage; Performance gain; Power generation; Temperature dependence; Thermal management;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.816551

Filename

1232936