Title :
SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor
Author :
Cheng, Lin ; Steckl, Andrew J. ; Scofield, James
Author_Institution :
Nanoelectronics Lab., Univ. of Cincinnati, OH, USA
Abstract :
Polycrystalline SiC grown on single-crystal sapphire substrates have been investigated as thin-film Fabry-Perot interferometers for fiber-optic temperature measurements in harsh temperatures. SiC-based temperature sensors are compact in size, robust, and stable at high temperatures, making them one of the best choices for high temperature applications. SiC films with thickness of about 0.5-2.0 μm were grown at 1100°C by chemical vapor deposition (CVD) with trimethylsilane. The effect of operating temperature on the shifts in resonance minima, Δλm, of the SiC/sapphire substrate has been measured in the visible-infrared wavelength range. A temperature sensitivity of 1.9×10-5/°C is calculated using the minimum at ∼700 nm. Using a white, broadband light source, a temperature accuracy of ±3.5°C is obtained over the temperature range of 22°C to 540°C.
Keywords :
Fabry-Perot interferometers; fibre optic sensors; high-temperature techniques; semiconductor thin films; silicon compounds; temperature sensors; 0.5 to 2.0 micron; 1100 degC; 22 to 540 degC; 700 nm; CVD; SiC; broadband light source; fiber-optic temperature sensor; harsh temperatures; high temperature applications; resonance minima; thin-film Fabry-Perot interferometer; Fabry-Perot interferometers; Optical fiber sensors; Robustness; Silicon carbide; Substrates; Temperature distribution; Temperature measurement; Temperature sensors; Thin film sensors; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.816106