• DocumentCode
    786067
  • Title

    Charge-based chemical sensors: a neuromorphic approach with chemoreceptive neuron MOS (CνMOS) transistors

  • Author

    Shen, Nick Yu-Min ; Liu, Zengtao ; Lee, Chungho ; Minch, Bradley A. ; Kan, Edwin Chih-Chuan

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    50
  • Issue
    10
  • fYear
    2003
  • Firstpage
    2171
  • Lastpage
    2178
  • Abstract
    A novel chemoreceptive neuron MOS (CνMOS) transistor with an extended floating-gate structure has been designed with several individual features that significantly facilitate system integration of chemical sensing. We have fabricated CνMOS transistors with generic molecular receptive areas and have characterized them with various fluids. We use an insulating polymer layer to provide physical and electrical isolation for sample fluid delivery. Experimental results from these devices have demonstrated both high sensitivity via current differentiation and large dynamic range from threshold voltage shifts in sensing both polar and electrolytic liquids. We have established electrochemical models for both steady-state and transient analyses. Our preliminary measurement results have confirmed the basic design and operations of these devices, which show potential for developing silicon olfactory and gustatory units that are fully compatible with current CMOS technology.
  • Keywords
    CMOS integrated circuits; chemical sensors; chemioception; microsensors; neural chips; transient analysis; CνMOS; charge-based chemical sensors; chemoreceptive neuron MOS; current differentiation; dynamic range; electrical isolation; electrochemical models; extended floating-gate structure; fluid delivery; generic molecular receptive areas; gustatory units; insulating polymer layer; neuromorphic approach; olfactory units; physical isolation; sensitivity; steady-state analyses; system integration; threshold voltage shifts; transient analyses; CMOS technology; Chemical sensors; Dielectrics and electrical insulation; Dynamic range; MOSFETs; Neuromorphics; Neurons; Plastic insulation; Polymers; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.816905
  • Filename
    1232939