Title :
Author\´s reply to comment on "Noise source modeling for cyclostationary noise analysis in large-signal device operation," by Delage and Obregon
Author :
Bonani, Fabrizio ; Donati Guerrieri, Simona ; Ghione, G.
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
Abstract :
For original paper see ibid., vol. 49, p. 1640-7 (2002). For comment see ibid., vol. 50, no. 10, p. 2183 (2003). Apologizes for overlooking some works of the commenting authors, discusses system models and the physical origin of noise.
Keywords :
semiconductor device models; semiconductor device noise; two-port networks; white noise; cyclostationary noise analysis; large-signal device operation; noise source modeling; physical origin; semiconductor device noise; system models; Circuit noise; Circuit simulation; Current density; DC generators; Fluctuations; Noise generators; Noise level; Resistors; Semiconductor device noise; Semiconductor devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815581
