Enhanced Critical Electrical Characteristics in a Nanoscale Low-Voltage SOI MOSFET With Dual Tunnel Diode

Author

Anvarifard, Mohammad Kazem ; Orouji, Ali Asghar

Author_Institution

Dept. of Electr. & Comput. Eng., Semnan Univ., Semnan, Iran

Volume

62

Issue

5

fYear

2015

fDate

May-15

Firstpage

1672

Lastpage

1676

Abstract

This brief presents a nanoscale low-voltage partially depleted silicon-on-insulator (SOI) structure with improved electrical performance. The brain of the proposed structure is a dual tunnel diode (DTD) composed of a heavily doped p-type L-shaped trench. The accumulated holes are effectively released by the tunnel current of DTD, thus reducing the critical kink effect. Compared with a conventional SOI, the proposed structure is considered as an efficient rival in nanoscale-integrated applications.

Keywords

MOSFET; isolation technology; silicon-on-insulator; tunnel diodes; DTD; critical kink effect; dual tunnel diode; heavily doped p-type L-shaped trench; nanoscale low-voltage SOI MOSFET; nanoscale low-voltage partially depleted SOI structure; nanoscale low-voltage partially depleted silicon-on-insulator structure; nanoscale-integrated applications; tunnel current; Hysteresis; Lattices; MOSFET; Nanoscale devices; Performance evaluation; Silicon-on-insulator; Dual tunnel diode (DTD); L-shaped trench; floating body effect (FBE); kink effect; partially depleted silicon-on-insulator MOSFET (PD-SOI MOSFET); partially depleted silicon-on-insulator MOSFET (PD-SOI MOSFET).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2414825

Filename

7073563