2.0 W CW, diffraction-limited tapered amplifier with diode injection

Author

Mehuys, D. ; Welch, D.F. ; Goldberg, L.

Author_Institution

Spectra Diode Labs., San Jose, CA, USA

Volume

28

Issue

21

fYear

1992

Firstpage

1944

Lastpage

1946

Abstract

The authors have demonstrated an all-semiconductor discrete-element 1.5 mm length tapered-amplifier MOPA (master oscillator power amplifier) emitting up to 2.0 W CW in a diffraction-limited pattern. The tapered single-pass amplifier MOPA exhibits a very high differential efficiency of 72% and a total energy conversion efficiency of 39% at 2.0 W CW output power. The high efficiency of the MOPA is attributed to the tapered amplifier design, which maximises extraction efficiency with a low-power injected beam of 25 mW from a single-mode laser diode. Such an MOPA will have applications where compact, high-efficiency, diffraction-limited sources of radiation are required, such as frequency doubling and free-space communication.

Keywords

laser cavity resonators; optical communication equipment; semiconductor lasers; 1.5 mm; 2 W; 25 mW; 39 percent; 72 percent; AR coatings; differential efficiency; diffraction-limited pattern; diffraction-limited tapered amplifier; diode injection; extraction efficiency; free-space communication; frequency doubling; low-power injected beam; semiconductor lasers; single-mode laser diode; single-pass amplifier; total energy conversion efficiency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19921246

Filename

170850