DocumentCode :
786432
Title :
A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic
Author :
Dickson, Timothy O. ; Beerkens, Rudy ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont., Canada
Volume :
40
Issue :
4
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
994
Lastpage :
1003
Abstract :
A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate retiming flip-flop operates from the lowest supply voltage of any silicon-based flip-flop demonstrated to date at this speed. MOS and SiGe heterojunction-bipolar-transistor (HBT) current-mode logic families are compared. Capitalizing on the best features of both families, a true BiCMOS logic topology is presented that allows for operation from lower supply voltages than pure HBT implementations without compromising speed. The topology, based on a BiCMOS cascode, can also be applied to a number of millimeter-wave (mm-wave) circuits. In addition to the retiming flip-flop, the decision circuit includes a broadband transimpedance preamplifier to improve sensitivity, a tuned 45-GHz clock buffer, and a 50-Ω output driver. The first mm-wave transformer is employed along the clock path to perform single-ended-to-differential conversion. The entire circuit, which is implemented in a production 130-nm BiCMOS process with 150-GHz fT SiGe HBT, consumes 288 mW from a 2.5-V supply, including only 58 mW from the flip-flop.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; current-mode logic; flip-flops; heterojunction bipolar transistors; low-power electronics; 130 nm; 150 GHz; 2.5 V; 288 mW; 45 GHz; 45 Gbit/s; 58 mW; BiCMOS decision circuit; BiCMOS logic topology; SiGe; clock buffer; current-mode logic; flip-flop; heterojunction bipolar transistor; low supply voltages; millimeterwave circuits; mm-wave transformer; transimpedance amplifier; BiCMOS integrated circuits; Circuit topology; Clocks; Flip-flops; Germanium silicon alloys; Heterojunction bipolar transistors; Logic circuits; Millimeter wave circuits; Silicon germanium; Voltage; BiCMOS; SiGe HBT; current-mode logic; flip-flops; low-noise; millimeter-wave (mm-wave); transformer; transimpedance amplifier;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2004.842828
Filename :
1424232
Link To Document :
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