Title :
Room temperature CW operation of orange light (625 nm) emitting InGaAlP laser
Author :
Rennie, J. ; Okajima, M. ; Watanabe, Manabu ; Hatakoshi, G.
Author_Institution :
Toshiba Corp. Res. & Dev. Center, Kawasaki, Japan
Abstract :
An InGaAlP laser operating under continuous wave excitation, having a record short wavelength of 625 nm at room temperature has been constructed. This was accomplished employing a tensile strained ( Delta a/a=-1%) multiquantum well active region and a six pair multiquantum barrier structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 625 nm; CW operation; InGaAlP laser; continuous wave excitation; multiquantum barrier structure; multiquantum well active region; orange light emission; room temperature; tensile strained MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921250
