All-optical AND/NAND logic gates using semiconductor microresonators

Author

Ibrahim, Tarek A. ; Grover, R. ; Kuo, L.C. ; Kanakaraju, S. ; Calhoun, L.C. ; Ho, P.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA

Volume

15

Issue

10

fYear

2003

Firstpage

1422

Lastpage

1424

Abstract

We demonstrate all-optical AND and NAND logic gate operations by nonlinear absorption in a single critically coupled semiconductor micro-racetrack resonator. The device is pumped with two counter-propagating data streams tuned to one of its resonance wavelengths and probed at the next higher resonance wavelength. We investigate and compare the performance of both InP and GaAs devices in terms of switching energy and speed. The GaAs gate demonstrates operation up to 30 Gb/s.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light absorption; micro-optics; micromechanical resonators; nonlinear optics; optical logic; 30 Gbit/s; GaAs; GaAs gate; InP; all-optical AND/NAND logic gates; counter-propagating data streams; critically coupled semiconductor micro-racetrack resonator; next higher resonance wavelength; nonlinear absorption; resonance wavelengths; semiconductor microresonators; switching energy; switching speed; Absorption; Gallium arsenide; High speed optical techniques; Indium phosphide; Logic devices; Logic gates; Microcavities; Optical resonators; Probes; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818049

Filename

1232978