• DocumentCode
    786475
  • Title

    Some Plasma Effects in Semiconductors

  • Author

    Ancker-Johnson, Betsy

  • Author_Institution
    Boeing Scientific Research Laboratories, Seattle, Washington
  • Volume
    14
  • Issue
    6
  • fYear
    1967
  • Firstpage
    27
  • Lastpage
    39
  • Abstract
    This is a review of some selected plasma effects in semiconductors, principally InSb at 77° K. The production of nonequilibrium electronhole plasmas by electrical injection and impact ionization is described including some instabilities which attend the latter process. Some new results on the pinch effect obtained by diagnosis with a 10.6 ¿ CW laser are shown. Observations of the manifestation of another instability, namely gigahertz radiation, not requiring an applied magnetic field are presented. A magnetic field is required to produce some instabilities in plasmas, among these are the helical instability. A bistable element resulting from an inherent hysteresis in the threshold conditions of this instability is described. Discontinuous changes in the plasma conductance can be produced by a magnetic field and the relation of this effect to high intensity microwave emission is outlined. Finally, some preliminary results on plasma decay are presented.
  • Keywords
    IEEE Transactions on Plasma Science; Impact ionization; Laboratories; Magnetic fields; Nuclear and plasma sciences; Plasma chemistry; Plasma diagnostics; Plasma temperature; Production; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1967.4324772
  • Filename
    4324772