Title :
A Two Level Model for Lifetime Reduction Processes in Neutron Irradiated Silicon and Germanium
Author :
Messenger, George C.
Author_Institution :
Northrop Corporate Laboratories Hawthorne, California
Abstract :
A two level mnodel for recombination processes in neutron irradiated silicon and germanium is proposed. This model successfully explains published experimental data for lifetime and. life-time damage constant as a function of resistivity, injection level and, temperature.
Keywords :
Conductivity; Electrons; Energy capture; Energy states; Germanium; Laboratories; Neutrons; Semiconductor process modeling; Silicon devices; Spontaneous emission;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1967.4324780
