DocumentCode
786607
Title
Side-light-injection MQW bistable laser using saturable absorption and gain quenching
Author
Uenohara, Hiroyuki ; Kawamura, Yuriko ; Iwamura, Hideyuki ; Nonaka, Koji ; Tsuda, Hiroyuki ; Kurokawa, Takashi
Author_Institution
NTT Opto-Electronics Labs., Kanagawa, Japan
Volume
28
Issue
21
fYear
1992
Firstpage
1973
Lastpage
1975
Abstract
The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a side-light-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 mu W results in saturable absorption in one intersection biased at +0.65 V, and 570 mu W causes gain quenching in the other intersection biased at +0.93 V.
Keywords
optical bistability; optical saturable absorption; optical waveguides; semiconductor lasers; 0.65 V; 0.93 V; 40 muW; 570 muW; MQW bistable laser; gain quenching; multiple quantum well; nonlinear optics; saturable absorption; semiconductor lasers; set-off operations; set-on operations; side-light-injection; waveguides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921265
Filename
170869
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