Application of Silicon Damage to Neutron Exposure Measurement

A technique is described for using the damage in silicon to measure neutron exposure in Radiation Damage Units (RDUs) with transistors called Radiation Damage Monitors (RDMs). The technique is useful in measuring the damage gradients across experiments and in determining the relative damage effect of a neutron environment. Two calibration procedures are described, as are the operating characteristics and use procedures for five transistor RDMs to cover the exposure range from 1011 to 1015 n/cm2.