Title :
Quantum well infra-red photodetector response controlled by very low power visible source
Author :
Berger, V. ; Vodjdani, N.
Author_Institution :
Lab. Central de Recherches, Thomson CSF, Orsay, France
Abstract :
An optically controlled quantum well infra-red photodetector is presented. The visible illumination changes the bias across the resistor-biased multiquantum well diode, and hence changes its photoresponse. The responsivity of the detector is controlled over several orders of magnitude with only a few milliwatts of control beam power.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; Ga 0.6Al 0.4As barrier; Ga 0.8Al 0.2As-GaAs; GaAs substrate; optical control; photoresponse; quantum well IR photodetector; resistor-biased multiquantum well diode; very low power visible source; visible illumination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921269
