Title :
Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature
Author :
Kuo, J.B. ; Sim, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A unique delayed-turn-on phenomenon in an accumulation-type SOI pMOS device operating at 77 K based on the low-temperature PISCES simulation is reported. As compared with the 300 K case, in the delayed-turn-on region, the accumulation-type SOI pMOS device at 77 K may not provide a larger transconductance as a result of the carrier freezeout effects in the thin film.
Keywords :
accumulation layers; cryogenics; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; 77 K; Si-SiO 2; accumulation-type SOI pMOS device; carrier freezeout effects; delayed-turn-on phenomenon; drain current; low-temperature PISCES simulation; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921271
