Title :
Long-wavelength high-efficiency low-threshold InGaAsP/InP MQW lasers with compressive strain
Author :
Davies, Mike ; Dion, M. ; Houghton, D.C. ; Vigneron, C.M.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
Abstract :
Broad-area MQW laser diodes using compressively strained (1.3%) InGaAsP wells are shown to have low threshold current density (=460 A cm-2) at lambda =1.75 mu m. Ridge waveguide lasers fabricated from the same material show low threshold currents, typically 20 mA with a differential efficiency of 23% per facet. These results constitute the best device performance to date for the InGaAsP/InP system in the 1.6-2.2 mu m-wavelength region.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.75 micron; 20 mA; 23 percent; InGaAsP-InP; MQW laser diodes; MQW lasers; broad-area lasers; compressive strain; device performance; differential efficiency; high efficiency lasers; long wavelength laser diodes; low threshold current density; low threshold currents; low threshold lasers; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921285
